By Leonard J. Brillson
"An crucial advisor to digital fabric Surfaces and Interfaces is a streamlined but finished creation that covers the elemental actual homes of digital fabrics, the experimental ideas used to degree them, and the theoretical equipment used to appreciate, expect, and layout them. beginning with the basic digital houses of semiconductors and electric measurements of semiconductor interfaces, this article introduces scholars to the significance of characterizing and controlling macroscopic electric houses through atomic-scale recommendations. The chapters that keep on with current the whole diversity of floor and interface suggestions now getting used to signify digital, optical, chemical, and structural houses of digital fabrics, together with semiconductors, insulators, nanostructures, and organics. the basic physics and chemistry underlying every one procedure is defined in enough intensity for college students to grasp the basic ideas, with various examples to demonstrate the strengths and barriers for particular functions. in addition to references to the main authoritative assets for broader discussions, the textual content comprises web hyperlinks to extra examples, mathematical derivations, tables, and literature references for the complicated pupil, in addition to execs in those fields. This textbook fills a niche within the current literature for an entry-level path that gives the actual homes, experimental recommendations, and theoretical equipment crucial for college students and pros to appreciate and perform solid-state electronics, physics, and fabrics technology research"-- Read more...
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Extra resources for An essential guide to electronic material surfaces and interfaces
Appl. Phys. L. (1972) Admittance spectroscopy of deep impurity levels: ZnTe Schottky barriers. Appl. Phys. , 21, 54. 15. R. R. (1973) Photocapacitance studies of the oxygen donor in GaP:. I. Optical cross sections, energy levels, and concentration. Phys. Rev. , and Porteous, P. (1976) Photocapacitance effects of deep traps in epitaxial GaAs. J. Appl. , 47, 3230. 16. T. (1976) Bulk and interface imperfections in semiconductors. , 19, 975. 17. F. (1970) Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experiments.
The heterojunction band offsets are primary factors determining these physical phenomena and device applications. As with Schottky barriers, these offsets along with the band bending within each semiconductor’s surface space charge region are determined not only by the bulk properties of the constituents but by dipoles and localized electronic states. Here we present the macroscopic electrical technique for measuring these offsets. Later chapters will describe advanced techniques to measure the physical properties that determine the heterojunction dipoles and band bending on an atomic scale.
1992) Inhomogeneous and wide range of barrier heights at metal/molecular-beam epitaxy GaAs(100) interfaces observed with electrical measurements. J. Vac. Sci. , B, 10, 1932. 24. C. B. (1978) Heterojunction Lasers, Part A: Fundamental Principles; Part B: Materials and Operating Characteristics, Academic Press, New York. 25. G. and S. Banarjee, S. (2000) Solid State Electronic Devices, 5th edn, Prentice Hall, Upper Saddle River, NJ, p. 229. 26. R. (1987) in: Heterojunction Band Discontinuities: Physics and Device Applications, (eds.